High-speed Si/GeSi hetero-structure Electro Absorption Modulator
نویسندگان
چکیده
منابع مشابه
High performance Ge/SiGe quantum well electro-absorption modulator
A 23 GHz Ge/SiGe multiple quantum well electroabsorption waveguide modulator is demonstrated with 10 dB extinction ratio (ER). 9 dB ER is achieved with 1V swing with energy consumption limited to 108 fJ per bit. Keywords-component; Quantum-confined Stark effect, Ge/SiGe, multiple quantum well modulators
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ژورنال
عنوان ژورنال: Optics Express
سال: 2018
ISSN: 1094-4087
DOI: 10.1364/oe.26.006663